tm ?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt november 2011 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. j unction temperature symbol description ratings units v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 80 a collector current @ t c = 100 o c 40 a i cm (1) pulsed collector current 120 a p d maximum power dissipation @ t c = 25 o c 349 w maximum power dissipation @ t c = 100 o c 174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c e g collector (flange) to-263ab/d2-pak c g c e FGB40N60SM 600v, 40a field stop igbt features ? maximum junction temperature : t j =175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) =1.9v(typ.) @ i c = 40a ? high input impedance ? fast switching ? tighten parameter distribution ? rohs compliant ? ir reflow only applications ? welding, pfc general description using novel field stop igbt technology, fairchilds new series of field stop 2nd generation igbts offer the optimu m perfor- mance for welding and pfc applications where low co nduction and switching losses are essential.
2 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt thermal characteristics package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 0.43 o c / w r ja thermal resistance, junction to ambient - 62.5 o c / w device marking device package reel size tape width quant ity FGB40N60SM FGB40N60SM to-263ab/d2-pak - - 50 symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a - 0.6 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 3.5 4.5 6.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v - 1.9 2.3 v i c = 40a , v ge = 15v, t c = 175 o c - 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1880 - pf c oes output capacitance - 180 - pf c res reverse transfer capacitance - 50 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 25 o c - 12 16 ns t r rise time - 20 28 ns t d(off) turn-off delay time - 92 120 ns t f fall time - 13 17 ns e on turn-on switching loss - 0.87 1.30 mj e off turn-off switching loss - 0.26 0.34 mj e ts total switching loss - 1.13 1.64 mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 175 o c - 15 - ns t r rise time - 22 - ns t d(off) turn-off delay time - 116 - ns t f fall time - 16 - ns e on turn-on switching loss - 0.97 - mj e off turn-off switching loss - 0.60 - mj e ts total switching loss - 1.57 - mj
3 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt electrical characteristics of the igbt (continued) symbol parameter test conditions min. typ. max units q g total gate charge v ce = 400v, i c = 40a, v ge = 15v - 119 180 nc q ge gate to emitter charge - 13 20 nc q gc gate to collector charge - 58 90 nc
4 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current le vel 0 2 4 6 0 20 40 60 80 100 120 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 0 20 40 60 80 100 120 v ge = 8v 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 12 0 30 60 90 120 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
5 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation volt age vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristi cs vs. gate resistance 4 8 12 16 20 0 4 8 12 16 20 80a i c = 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 40 80 120 0 3 6 9 12 15 400v common emitter t c = 25 o c 300v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 10 20 30 40 50 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 1 10 100 1000 0.01 0.1 1 10 100 300 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics v s. gate resistance colle ctor current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 10 20 30 40 50 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 0.1 1 5 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 0.1 1 6 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 1 10 100 200 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
7 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt typical performance characteristics figure 19. current derating figure 20. load current vs. fr equency figure 21 .transient thermal impedance of igbt 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 common emitter v ge = 15v collector current, i c [a] collector-emittercase temperature, t c [ o c] 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 110 120 tc = 75 o c square wave t j < 175 o c, d = 0.5, v ce = 400 v v ge = 15/0 v, r g = 6 ? collector current, i c [a] switching frequency, f [hz] tc = 100 o c 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5
8 www.fairchildsemi.com FGB40N60SM rev. a FGB40N60SM 600v, 40a field stop igbt mechanical dimensions to-263ab/d 2 -pak
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